svf 12n60 t/f /fg /s /k _datasheet hangzhou silan microelectronics c o.,ltd rev: 1. 5 201 2.0 8 . 2 3 h ttp://www.silan.com.cn page 1 of 9 nomenclature ordering information part no. package marking material packing svf 12n60t to - 220 - 3l svf 12n60t pb free tube svf 12n60f to - 220f - 3l svf 12n60f pb free tube svf12n60fg to - 220f - 3l svf12n60fg halogen free tube svf12n60 s to - 263 - 2l svf12n60 s pb fr ee tube svf12n60 str to - 263 - 2l svf12n60 s pb free tape&reel svf12n60 k to - 26 2 - 3 l svf12n60 k pb free tube 12 a , 6 0 0v n - channel mosfet general description svf 12n60 t/f /fg /s /k is an n - channel enhancement mode power mos field effect transistor which is produced using silan proprietary f - cell tm structure v dmos technology. the improved planar stripe cell and the im pro ved guard ring terminal have been especially tailored to minimize on - state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are widely used in ac - dc power suppliers , dc - dc converters and h - bridge pwm motor drivers. features ? 12 a,60 0v,r ds(on) (typ) = 0. 58 ? @v gs =10v ? low gate charge ? low crss ? fast switching ? improved dv/dt capability
silan microelectronics svf 12n60 t/f /fg /s /k _datasheet hangzhou silan microelectronics c o.,ltd rev: 1. 201 2.0 . 2 3 h ttp://.silan.com.cn page 2 o absolute maximum ratings (t c 2 characteristics symbol r ating s unit sv f 12n 60t sv f 12n 60f (g) sv f 12n 60s sv f 12n 60k drai n - source voltage v ds 600 v gate - source voltage v gs 30 v drain current t c 2c i d 12 a t c 100 c drain current pulsed i dm a poer dissipation (t c 2 thermal characteristics characteristics symbol r ating s unit sv f 12n 60t sv f 12n 60f (g) sv f 12n 60s sv f 12n 60k t h ermal resistance, unction - to - case r jc ja electrical characteristics (t c 2 characteristics symbol test conditions min . typ. max. unit drain - s ource b reakdon v oltage b vdss v gs 0v, i d 20a 6 0 0 -- -- v d rain - source leakage current i dss v ds 6 0 0 v, v gs 0v -- -- 1 . 0 a gate - s ource l eak age c urrent i gss v gs 30 v , v ds 0 v -- -- 10 0 na gate threshold v oltage v gs(th) v gs v ds , i d 20a 2.0 -- .0 v static drain - s ource o n s tate r esistance r ds(on) v gs 10 v, i d 6.0 a -- 0. 0. ? ?
silan microelectronics svf 12n60 t/f /fg /s /k _datasheet hangzhou silan microelectronics c o.,ltd rev: 1. 201 2.0 . 2 3 h ttp://.silan.com.cn page 3 o source - drain diode ratings and characteristics characteristics symbol test conditions min. typ. max. unit continuous sour ce current i s integral reverse p - n unction diode in the mosfet -- -- 12 a pulsed source current i sm -- -- diode forard voltage v sd i s 12a,v gs 0v -- -- 1. 3 v reverse recovery time t rr i s 12a,v gs 0v, di f /dt100a/ s (note 2 ) -- . -- ns reverse recovery charge rr -- .2 -- c notes: 1. l= 30 mh, i as = 6.66 a, v dd = 140 v, r g =25 ? 300s,duty cycle2%; typical characteristics figure 1. on-region characteristics figure 2. transer characteristics drain current C C C C C ?) drain current C C C
silan microelectronics svf 12n60 t/f /fg /s /k _datasheet hangzhou silan microelectronics c o.,ltd rev: 1. 201 2.0 . 2 3 h ttp://.silan.com.cn page o typical characteristics(continued) 0. 0. 1.1 1.0 -100 -0 0 0 100 200 drain-source breakdon voltage(normalied) C C C ? C C C C
silan microelectronics svf 12n60 t/f /fg /s /k _datasheet hangzhou silan microelectronics c o.,ltd rev: 1. 201 2.0 . 2 3 h ttp://.silan.com.cn page o typical characteristics(continued) 2 0 100 12 10 0 2 6 12 figure 10. maximum drain current vs. case temperature drain current - i d (a) case temperature C ???
silan microelectronics svf 12n60 t/f /fg /s /k _datasheet hangzhou silan microelectronics c o.,ltd rev: 1. 201 2.0 . 2 3 h ttp://.silan.com.cn page 6 o typical test circuit 12v 50k 300nf same type as dut dut v gs 3ma v ds v gs 10v charge qg qgs qgd gate charge test circuit & waveform resistive switching test circuit & waveform v ds v gs r g r l v dd 10v v ds v gs 10% 90% td(on) t on tr td(off) t off t f unclamped inductive switching test circuit & waveform v ds r g v dd 10v l tp i d b vdss i as v dd tp time v ds(t) i d(t) e as = 1 - 2 li as 2 b vdss b vdss v dd dut dut 200nf
silan microelectronics svf 12n60 t/f /fg /s /k _datasheet hangzhou silan microelectronics c o.,ltd rev: 1. 201 2.0 . 2 3 h ttp://.silan.com.cn page o package outline to -220- 3l unit: mm 6.10.00 . to -220f -3l unit: mm 3.300.2 2.00.30 .20. 30 10.030.30 2.0. 2 1.0.0 .00.0 2. type 1.max 0.00.1 0.00.1 1.00.0 6.00.30
silan microelectronics svf 12n60 t/f /fg /s /k _datasheet hangzhou silan microelectronics c o.,ltd rev: 1. 201 2.0 . 2 3 h ttp://.silan.com.cn page o package outline (continued) to -263- 2l unit: mm .0.10 1.20. 10 1.20.10 0 to -262- 3l unit: mm 0.1
silan microelectronics svf 12n60 t/f /fg /s /k _datasheet hangzhou silan microelectronics c o.,ltd rev: 1. 201 2.0 . 2 3 h ttp://.silan.com.cn page o disclaimer : ? silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! customers should obtain the l atest relevant information before placing orders and should verify that such information is complete and current. ? all semiconductor products malfunction or fail with some probability under special conditions. when using silan products in system design or c omplete machine manufacturing, it is the responsibility of the buye r to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such silan products could cause loss of body injury or damage to property. ? silan will supply the best possible product for c ustomers! attachment revision history dat e rev description page 2011.01.1 1.0 original 2011.0.30 1.1 modiy package outline 2012.0. 11 1.2 add the halogen ree inormation o svf12n60f 2012.0.31 1.3 modiy the value o trr and rr modiy the value o c apacitance modiy the igure 2012.06.1 1. modiy the typ. value o r ds(on) 2012.0.23 1. add the package o to - 262 - 3l
|
